Cypress Semiconductor CY7C1425JV18 Bedienungsanleitung PDF herunterladen

36-Mbit QDR™-II SRAM 2-Word

Burst Architecture

CY7C1410JV18, CY7C1425JV18

CY7C1412JV18, CY7C1414JV18

Cypress Semiconductor Corporation • 198 Champion Court • San Jose

CA 95134-1709 • 408-943-2600

Document #: 001-12561 Rev. *F Revised July 31, 2009

Features

■

Separate Independent Read and Write Data Ports

❐

Supports concurrent transactions

■

267 MHz Clock for High Bandwidth

■

2-word Burst on all Accesses

■

Double Data Rate (DDR) Interfaces on both Read and Write

Ports (data transferred at 534 MHz) at 267 MHz

■

Two Input Clocks (K and K) for Precise DDR Timing

❐

SRAM uses rising edges only

■

Two Input Clocks for Output Data (C and C) to Minimize Clock

Skew and Flight Time Mismatches

■

Echo Clocks (CQ and CQ) Simplify Data Capture in High Speed

Systems

■

Single Multiplexed Address Input Bus latches Address Inputs

for both Read and Write Ports

■

Separate Port Selects for Depth Expansion

■

Synchronous Internally Self-timed Writes

■

QDR™-II operates with 1.5 Cycle Read latency when Delay

Lock Loop (DLL) is enabled

■

Operates like a QDR-I device with 1 Cycle Read Latency in

DLL Off Mode

■

Available in x8, x9, x18, and x36 configurations

■

Full Data Coherency, providing most Current Data

■

Core V

= 1.8V (±0.1V); I/O V

DDQ

= 1.4V to V

■

Available in 165-Ball FBGA Package (15 x 17 x 1.4 mm)

■

Offered in both Pb-free and non Pb-free packages

■

Variable Drive HSTL Output Buffers

■

JTAG 1149.1 Compatible Test Access Port

■

Delay Lock Loop (DLL) for Accurate Data Placement

Configurations

CY7C1410JV18 – 4M x 8

CY7C1425JV18 – 4M x 9

CY7C1412JV18 – 2M x 18

CY7C1414JV18 – 1M x 36

Functional Description

The CY7C1410JV18, CY7C1425JV18, CY7C1412JV18, and

CY7C1414JV18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR-II architecture. QDR-II architecture consists

of two separate ports: the read port and the write port, to access

the memory array. The read port has data outputs to support read

operations and the write port has data inputs to support write

operations. QDR-II architecture has separate data inputs and

data outputs to eliminate the need to ‘turnaround’ the data bus

required with common I/O devices. Access to each port is

accomplished through a common address bus. The read

address is latched on the rising edge of the K clock and the write

address is latched on the rising edge of the K

clock. Accesses to

the QDR-II read and write ports are completely independent of

one another. To maximize data throughput, both read and write

ports are provided with DDR interfaces. Each address location

is associated with two 8-bit words (CY7C1410JV18), 9-bit words

(CY7C1425JV18), 18-bit words (CY7C1412JV18), or 36-bit

words (CY7C1414JV18) that burst sequentially into or out of the

device. Because data is transferred into and out of the device on

every rising edge of both input clocks (K and K

and C and C),

memory bandwidth is maximized while simplifying system

design by eliminating bus ‘turnarounds’.

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K

input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

Selection Guide

Description 267 MHz 250 MHz Unit

Maximum Operating Frequency 267 250 MHz

Maximum Operating Current x8 1330 1200 mA

x9 1330 1200

x18 1370 1230

x36 1460 1290

[+] Feedback

1 2 3 4 5 6 ... 25 26

Inhaltsverzeichnis

Seite 1 - Burst Architecture

36-Mbit QDR™-II SRAM 2-WordBurst ArchitectureCY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Cypress Semiconductor Corporation • 198 Champion Cour

Seite 2

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 10 of 26Truth TableThe truth table for CY7C1410JV18, CY7C1425JV

Seite 3

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 11 of 26Write Cycle DescriptionsThe write cycle description tab

Seite 4

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 12 of 26IEEE 1149.1 Serial Boundary Scan (JTAG)These SRAMs inco

Seite 5

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 13 of 26between the TDI and TDO pins and shifts the IDCODE out

Seite 6

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 14 of 26TAP Controller State DiagramThe state diagram for the T

Seite 7

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 15 of 26TAP Controller Block DiagramTAP Electrical Characterist

Seite 8

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 16 of 26TAP AC Switching Characteristics Over the Operating Ran

Seite 9

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 17 of 26Identification Register Definitions Instruction FieldVa

Seite 10 - CY7C1412JV18, CY7C1414JV18

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 18 of 26Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # B

Seite 11

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 19 of 26Power Up Sequence in QDR-II SRAMPower up and initialize

Seite 12

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 2 of 26Logic Block Diagram (CY7C1410JV18)Logic Block Diagram (C

Seite 13

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 20 of 26Maximum RatingsExceeding maximum ratings may impair the

Seite 14

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 21 of 26AC Electrical Characteristics Over the Operating Range

Seite 15

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 22 of 26Switching Characteristics Over the Operating Range [20,

Seite 16 - [+] Feedback

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 23 of 26Switching WaveformsFigure 5. Read/Write/Deselect Seque

Seite 17

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 24 of 26Ordering Information Not all of the speed, package and

Seite 18

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 25 of 26Package DiagramFigure 6. 165-ball FBGA (15 x 17 x 1.40

Seite 19 - DLL Constraints

Document #: 001-12561 Rev. *F Revised July 31, 2009 Page 26 of 26QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypre

Seite 20 - Operating Range

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 3 of 26Logic Block Diagram (CY7C1412JV18)Logic Block Diagram (C

Seite 21 - Capacitance

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 4 of 26Pin ConfigurationThe pin configuration for CY7C1410JV18,

Seite 22

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 5 of 26CY7C1412JV18 (2M x 18)1 2 3 4 5 6 7 8 9 10 11A CQ NC/144

Seite 23

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 6 of 26Pin Definitions Pin Name I/O Pin DescriptionD[x:0]Input-

Seite 24

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 7 of 26CQ Echo Clock CQ is Referenced with Respect to C. This i

Seite 25 - Package Diagram

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 8 of 26Functional OverviewThe CY7C1410JV18, CY7C1425JV18, CY7C1

Seite 26 - Document History Page

CY7C1410JV18, CY7C1425JV18CY7C1412JV18, CY7C1414JV18Document #: 001-12561 Rev. *F Page 9 of 26Programmable ImpedanceAn external resistor, RQ, is conne

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