Cypress Semiconductor Perform nvSRAM Spezifikationen Seite 23

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CY14B256KA
Document Number: 001-55720 Rev. *H Page 23 of 28
Hardware STORE Cycle
Over the Operating Range
Parameter Description Min Max Unit
t
DHSB
HSB to output active time when write latch not set 25 ns
t
PHSB
Hardware STORE pulse width 15 ns
Switching Waveforms
Figure 15. Hardware STORE Cycle
[40]
Figure 16. Soft Sequence Processing
[41, 42]
t
PHSB
t
PHSB
t
DELAY
t
DHSB
t
DELAY
t
STORE
t
HHHD
t
LZHSB
Write latch set
Write latch not set
HSB (IN)
HSB (OUT)
DQ (Data Out)
RWI
HSB (IN)
HSB (OUT)
RWI
HSB pin is driven high to V
CC
only by Internal
SRAM is disabled as long as HSB (IN) is driven low
.
HSB driver is disabled
t
DHSB
100 kOhm resistor,
Address #1 Address #6 Address #1 Address #6
Soft Sequence
Command
t
SS
t
SS
CE
Address
V
CC
t
SA
t
CW
Soft Sequence
Command
t
CW
Notes
40. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
41. This is the amount of time it takes to take action on a soft sequence command. Vcc power must remain HIGH to effectively register command.
42. Commands such as STORE and RECALL lock out I/O until operation is complete which further increases this time. See the specific command.
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