
12.02.07
49
Simtek Confidential
SONOS Technology
+10V to +12V
-10V to -12V
Use Difference in VT (or
∆
VT) to Represent Binary Data States
Operation of a SONOS device
PROGRAM (positive voltage on gate)
•
Electrons tunnel from substrate to trapping layer
•
Electrons are trapped
→ VT increases
ERASE (negative voltage on gate)
•
Holes tunnel from substrate to trapping layer
•
Holes recombine with trapped electrons
→ VT decreases
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