Document Number: 001-74584 Rev. *C Page 19 of 30
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied ......................................... –55 C to +125 C
Supply Voltage on V
DD
Relative to GND .....–0.5 V to +4.6 V
Supply Voltage on V
DDQ
Relative to GND .... –0.5 V to +V
DD
DC Voltage Applied to Outputs
in Tri-State ........................................–0.5 V to V
DDQ
+ 0.5 V
DC Input Voltage ................................ –0.5 V to V
DD
+ 0.5 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(per MIL-STD-883, Method 3015) ........................... >2001 V
Latch-up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
V
DD
V
DDQ
Industrial –40 °C to +85 °C 3.3 V– 5% /
+10%
2.5 V – 5% to
V
DD
Electrical Characteristics
Over the Operating Range
Parameter
[12, 13]
Description Test Conditions
CY7C1365C
Unit
Min Max
V
DD
Power Supply Voltage 3.135 3.6 V
V
DDQ
I/O Supply Voltage for 3.3 V I/O 3.135 3.6 V
for 2.5 V I/O 2.375 2.625 V
V
OH
Output HIGH Voltage for 3.3 V I/O, I
OH
= –4.0 mA 2.4 – V
for 2.5 V I/O, I
OH
= –1.0 mA 2.0 – V
V
OL
Output LOW Voltage for 3.3 V I/O, I
OL
= 8.0 mA – 0.4 V
for 2.5 V I/O, I
OL
= 1.0 mA – 0.4 V
V
IH
Input HIGH Voltage for 3.3 V I/O 2.0 V
DD
+ 0.3 V V
for 2.5 V I/O 1.7 V
DD
+ 0.3 V V
V
IL
Input LOW Voltage
[7]
for 3.3 V I/O –0.3 0.8 V
for 2.5 V I/O –0.3 0.7 V
I
X
Input Leakage Current except ZZ
and MODE
GND V
I
V
DDQ
55A
Input Current of MODE Input = V
SS
–30 – A
Input = V
DD
–5A
Input Current of ZZ Input = V
SS
–5 – A
Input = V
DD
–30A
I
OZ
Output Leakage Current GND V
I
V
DDQ
, Output Disabled –5 5 A
I
DD
V
DD
Operating Supply Current V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
7.5-ns cycle,
133 MHz
–250mA
I
SB1
Automatic CE Power-Down
Current – TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
, f = f
MAX
,
inputs switching
7.5-ns cycle,
133 MHz
–110mA
I
SB2
Automatic CE Power-Down
Current – CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
V
DD
– 0.3V or V
IN
0.3V,
f = 0, inputs static
7.5-ns cycle,
133 MHz
–40mA
Notes
12. Overshoot: V
IH(AC)
< V
DD
+ 1.5 V (Pulse width less than t
CYC
/2), undershoot: V
IL(AC)
> –2 V (Pulse width less than t
CYC
/2).
13. T
Power-up
: Assumes a linear ramp from 0 V to V
DD(min)
within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
(36 Seiten)
Manymanuals.com
Manymanuals.de
Manymanuals.fr
Manymanuals.it
Manymanuals.pl
Manymanuals.cz
Manymanuals.es
Manymanuals-pt.com
Kommentare zu diesen Handbüchern